參數(shù)資料
型號(hào)： M29F100-T70M3TR
廠商： 意法半導(dǎo)體
元件分類： FLASH
英文描述： 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
中文描述： 1兆位的128KBx8或64Kbx16，有啟動(dòng)區(qū)域的單電源閃存
文件頁數(shù)： 8/30頁
文件大?。?/td> 207K
代理商： M29F100-T70M3TR
Symbol
Alt
Parameter
M29F100T / M29F100B
Unit
-70
-90
-120
VCC =5V
± 5% VCC =5V ± 10% VCC =5V ± 10%
High Speed
Interface
Standard
Interface
Standard
Interface
Min
Max
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
70
90
120
ns
tELWL
tCS
Chip Enable Low to Write Enable
Low
000
ns
tWLWH
tWP
Write Enable Low to Write Enable
High
35
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
30
45
50
ns
tWHDX
tDH
Write Enable High to Input
Transition
000
ns
tWHEH
tCH
Write Enable High to Chip Enable
High
000
ns
tWHWL
tWPH
Write Enable High to Write Enable
Low
20
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
ns
tWLAX
tAH
Write Enable Low to Address
Transition
45
50
ns
tGHWL
Output Enable High to Write
Enable Low
000
ns
tVCHEL
tVCS VCC High to Chip Enable Low
50
s
tWHGL
tOEH
Write Enable High to Output
Enable Low
000
ns
tPHPHH
(1,2)
tVIDR RP Rise Time to VID
500
ns
tPLPX
tRP
RP Pulse Width
500
ns
tWHRL
(1)
tBUSY Program Erase Valid to RB Delay
30
35
50
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
s
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 15. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70
°C, –40 to 85°C or –40 to 125°C)
Erase Suspend (ES) Instruction. The Block
Erase operation may be suspended by this instruc-
tion which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhen the P/E.C. is suspended.The Toggle
bits will stop toggling between 0.1
s and 15s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
16/30
M29F100T, M29F100B
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