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參數(shù)資料
| 型號(hào)： | LT3751IUFD#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC20 |
| 封裝： | 4 X 5 MM, LEAD FREE, PLASTIC, QFN-20 |
| 文件頁數(shù)： | 10/34頁 |
| 文件大?。?/td> | 403K |
| 代理商： | LT3751IUFD#TRPBF |
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LT3751
18
3751fb
APPLICATIONS INFORMATION
with VTRANS between 100V and 400V (refer to Typical
Applications section). Consult applications engineering
for applications with VTRANS operating above 400V.
RVOUT is required for capacitor charger applications but
may be removed for regulator applications. Note that the
VOUT comparator can be used as secondary protection
for regulator applications. If the VOUT comparator is used
for protection, design VOUT,TRIP 15% to 20% higher than
the regulation voltage. Tie the RVOUT pin to ground when
RVOUT resistor is removed.
RDCM needs to be properly sized in relation to RVTRANS.
Improper selection of RDCM can lead to undesired
switching operation at low output voltages. Use Table 2
to size RDCM.
Parasitic capacitance on RVTRANS,RVOUT,andRDCMshould
be minimized. Capacitances on these nodes slow down
the response times of the VOUT and DCM comparators.
Keep the distance between the resistor and pin short. It
is recommended to remove all ground and power planes
underneath these pins and their respective components
(refer to the recommended board layout at the end of
this section).
RBG Selection
RBG sets the trip current (0.98/RBG) and is directly related
to the selection of RVOUT. The best accuracy is achieved
with a trip current between 100μA and 2mA. Choosing
Table 3. Recommended NMOS Transistors
MANUFACTURER
PART NUMBER
ID (A)
VDS(MAX) (V)
RDS(ON) (mΩ)
QG(TOT) (nC)
PACKAGE
Fairchild Semiconductor
www.fairchildsemi.com
FDS2582
FQB19N20L
FQP34N20L
FQD12N20L
FQB4N80
4.1
21
31
12
3.9
150
200
800
66
140
75
280
3600
11
27
55
16
19
SO-8
D2PAK
TO-220
DPAK
D2PAK
On Semiconductor
www.onsemi.com
MTD6N15T4G
NTD12N10T4G
NTB30N20T4G
NTB52N10T4G
6
12
30
52
150
100
200
100
300
165
81
30
15
14
75
72
DPAK
D2PAK
Vishay
www.vishay.com
Si7820DN
Si7818DN
SUP33N20-60P
2.6
3.4
33
200
150
200
240
135
60
12.1
20
53
1212-8
TO-220
RVOUT from Table 2 meets this criterion. Use the following
equation to size RBG (VTRANS ≤ 80V):
RN
RV
VV
BG
OUT
OUT TRIP
DIODE
=
+
098
.
,
Tie RBG pin to ground when not using the VOUT comparator.
Consult applications engineering for calculating RBG when
operating VTRANS above 80V.
NMOS Switch Selection
Choose an external NMOS power switch with minimal gate
charge and on-resistance that satises current limit and
voltage break-down requirements. The gate is nominally
driven to VCC – 2V during each charge cycle. Ensure that
this does not exceed the maximum gate to source voltage
rating of the NMOS but enhances the channel enough to
minimize the on-resistance.
Similarly, the maximum drain-source voltage rating of the
NMOS must exceed VTRANS + VOUT/N or the magnitude
of the leakage inductance spike, whichever is greater.
The maximum instantaneous drain current rating must
exceed selected current limit. Because the switching period
decreases with output voltage, the average current though
the NMOS is greatest when the output is nearly charged
and is given by:
I
AVG,M =
I
PK VOUT(PK)
2(V
OUT(PK) + N VTRANS )
See Table 3 for recommended external NMOS transistors.
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