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參數(shù)資料
| 型號： | LH28F160BJHG-BTLZ3 |
| 英文描述： | EEPROM|FLASH|1MX16|CMOS|BGA|48PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 1MX16 |的CMOS | BGA封裝| 48PIN |塑料 |
| 文件頁數(shù)： | 47/56頁 |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F160BJHG-BTLZ3 |
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SYMBOL
t
AVAV
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
90
MAX.
MIN.
100
MAX.
Write Cycle Time
RP# High Recovery to CE#
Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
IH
Setup to CE# Going High
V
PP
Setup to CE# Going High
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
PP
Hold from Valid SRD,
STS High Z
WP# V
IH
Hold from Valid SRD,
STS High Z
NOTES :
1.
In systems where CE# defines the write pulse width
(within a longer WE# timing waveform), all setup, hold
and inactive WE# times should be measured relative to
the CE# waveform.
2.
Sampled, not 100% tested.
3.
Refer to
Table 3
for valid A
IN
and D
IN
for block erase,
full chip erase, (multi) word/byte write or block lock-bit
configuration.
4.
V
PP
should be held at V
PPH1
until determination of block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration success (SR.1/3/4/5 = 0).
ns
t
PHEL
2
1
1
1
μs
t
WLEL
t
ELEH
t
SHEH
t
VPEH
t
AVEH
t
DVEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
t
EHRL
t
EHGL
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
0
50
100
100
40
40
5
5
0
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2
2
3
3
90
90
90
0
0
0
t
QVVL
2, 4
0
0
0
ns
t
QVSL
2, 4
0
0
0
ns
LH28F160S5-L/S5H-L
- 47 -
V
CC
= 5.0±0.25 V, 5.0±0.5 V, T
A
=
–
40 to +85°C
5.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 5)
LH28F160S5H-L70
(NOTE 6)
LH28F160S5H-L10
(NOTE 6)
LH28F160S5H-L70
UNIT
6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES (contd.)
(NOTE 1)
[LH28F160S5H-L]
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3B-L10 | Flash ROM |
| LH28F160S3B-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC |
| LH28F160S3D-L10 | x8/x16 Flash EEPROM |
| LH28F160S3D-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC |
| LH28F160S3HB-L10 | x8/x16 Flash EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160BJHG-TTLTD | 制造商:Sharp Microelectronics Corporation 功能描述:16M (1MX16) 3V, BOOT BLOCK, TOP, CSP48, IND, HAZMAT - Trays |
| LH28F160BVE-BTL10 | 制造商:Sharp Microelectronics Corporation 功能描述:16M (2MX8/1MX16) 3V, BOOT BLOCK, BOT, TSOP48, COM - Trays |
| LH28F160BVE-BTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Trays |
| LH28F160BVE-TTL90 | 制造商:Sharp Microelectronics 功能描述:NOR Flash Parallel 3V/3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Trays |
| LH28F160BVHE-TTL90 | 制造商:Sharp Microelectronics Corporation 功能描述:FLASH PARALLEL 3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Trays |
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