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參數(shù)資料
| 型號： | LE28CV1001T-12 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 5015 RR 26#16 SKT RECP |
| 中文描述： | 1MEG（131072字× 8位）快閃記憶體 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 276K |
| 代理商： | LE28CV1001T-12 |
Specifications
Absolute Maximum Ratings
at Ta = 25
°
C
Notes:1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to V
DD
+ 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
DC Recommended Operating Ranges
at Ta = 0 to +70°C
DC Electrical Characteristics
at Ta = 0 to +70°C, V
DD
= 3.3 V ± 0.3 V
Input/Output Pin Capacitances
at Ta = 25°C, V
DD
= 3.3 V ± 0.3 V, f = 1 MHz
Power on Timing
No. 5409-6/14
LE28CV1001M, T-12/15
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
V
DD
V
IN
V
OUT
V
A9
Pd max
–0.5 to +6.0
V
1
Input pin voltage
–0.5 to V
DD
+ 0.5
–0.5 to V
DD
+ 0.5
–0.5 to +14.0
V
1, 2
DQ pin voltage
V
1, 2
A9 pin voltage
V
1, 3
Allowable power dissipation
600
mW
1, 4
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Parameter
Symbol
min
typ
max
Unit
Supply voltage
V
DD
V
IL
V
IH
3.0
3.3
3.6
V
Input low-level voltage
0.6
V
Input high-level voltage
2.0
V
Parameter
Symbol
Conditions
max
Unit
Input/output capacitance
C
DQ
C
IN
V
DQ
= 0 V
V
IN
= 0 V
12
pF
Input capacitance
6
pF
Parameter
Symbol
Conditions
max
Unit
Time from power on until first read operation
t
PU-READ
t
PU-WRITE
100
μs
Time from power on until first write operation
5
ms
Parameter
Symbol
Conditions
min
typ
max
Unit
CE = OE = V
, WE = V
IH
, all DQ pins open,
address inputs = V
IH
or V
IL
, operating frequency =
1/t
RC
(minimum), V
DD
= V
DD
max
CE = WE = V
IL
, OE = V
IH
, V
DD
= V
DD
max
CE = OE = WE = V
IH
, V
DD
= V
DD
max
CE = OE = WE = V
DD
– 0.3 V,
V
DD
= V
DD
max
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
max
V
IN
= V
SS
to V
DD
, V
DD
= V
DD
max
I
OL
= 2.1 mA, V
DD
= V
DD
min
I
OH
= –400 μA, V
DD
= V
DD
min
Current drain during read
I
CCR
12
mA
Current drain during write
I
CCW
I
SB1
15
mA
TTL standby current
1
mA
CMOS standby current
I
SB2
20
μA
Input leakage current
I
LI
I
LO
V
OL
V
OH
10
μA
Output leakage current
10
μA
Output low-level voltage
0.4
V
Output high-level voltage
2.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LE28CV1001T-15 | 5015 RR 5#12 PIN RECP |
| LE28CV1001T | 1MEG (131072 words x 8 bits) Flash Memory |
| LE28DW1621T-80T | 16 Megabit FlashBank Memory |
| LE28DW1621T | 16 Megabit FlashBank Memory |
| LE28DW8102T | 8 Megabit FlashBank Memory LE28DW8102T |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LE28CV1001T-15 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:1MEG (131072 words x 8 bits) Flash Memory |
| LE28DW1621T | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:16 Megabit FlashBank Memory |
| LE28DW1621T-80T | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:16 Megabit FlashBank Memory |
| LE28DW3215AT-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| LE28DW8102T | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:8 Megabit FlashBank Memory LE28DW8102T |
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