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Specifications
Absolute Maximum Ratings
at Ta 25
°
C
Note: 1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to V
CC
+ 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
DC Recommended Operating Ranges
at Ta = 0 to +70°C
DC Electrical Characteristics
at Ta = 0 to +70°C, V
CC
= 5 V ± 10%
Input/output Capacitances
at Ta = 25°C, V
CC
= 5 V ± 10%, f = 1 MHz
Power on Timing
No. 5129-6/14
LE28C1001M, T-90/12/15
Parameter
Symbol
Ratings
Unit
Note
Supply voltage
V
CC
V
IN
V
OUT
V
A9
Pd max
–0.5 to +6.0
V
1
Input pin voltage
–0.5 to V
CC
+ 0.5
–0.5 to V
CC
+ 0.5
–0.5 to +14.0
V
1, 2
DQ pin voltage
V
1, 2
A9 pin voltage
V
1, 3
Allowable power dissipation
600
mW
1, 4
Operating temperature
Topr
0 to +70
°C
1
Storage temperature
Tstg
–65 to +150
°C
1
Parameter
Symbol
min
typ
max
Unit
Supply voltage
V
CC
V
IL
V
IH
4.5
5.0
5.5
V
Input low-level voltage
0.8
V
Input high-level voltage
2.0
V
Parameter
Symbol
Conditions
max
Unit
Input/output capacitance
C
DQ
C
IN
V
DQ
= 0 V
V
IN
= 0 V
12
pF
Input capacitance
6
pF
Parameter
Symbol
Conditions
max
Unit
Time from power on until first read operation
t
PU-READ
t
PU-WRITE
100
μs
Time from power on until first write operation
5
ms
Parameter
Symbol
Conditions
min
typ
max
Unit
CE = OE = V
IL
, WE = V
IH
, all DQ pins open,
address inputs = V
IH
or V
IL
, operating frequency =
1/t
RC
(minimum), V
CC
= V
CC
max
CE = WE = V
IL
, OE = V
IH
, V
CC
= V
CC
max
CE = OE = WE =V
IH
,V
CC
= V
CC
max
CE = OE = WE =V
CC
– 0.3 V,
V
CC
= V
CC
max
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
I
OL
= 2.1 mA, V
CC
= V
CC
min
I
OH
= –400 μA, V
CC
= V
CC
min
Current drain during read
I
CCR
30
mA
Current drain during write
I
CCW
I
SB1
50
mA
TTL standby current
3
mA
CMOS standby current
I
SB2
20
μA
Input leakage current
I
LI
I
LO
V
OL
V
OH
10
μA
Output leakage current
10
μA
Output low-level voltage
0.4
V
Output high-level voltage
2.4
V