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CMOS LSI
Ordering number : EN
*
5129A
D3096HA (OT)/N3095HA (OT) No. 5129-1/14
Preliminary
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
1MEG (131072 words
×
8 bits) Flash Memory
LE28C1001M, T-90/12/15
Overview
The LE28C1001M, T series ICs are 1 MEG flash memory
products that feature a 131072-word
×
8-bit organization
and 5 V single-voltage power supply operation. CMOS
peripheral circuits are adopted for high speed, low power
dissipation, and ease of use. A 128-byte page rewrite
function provides rapid data rewriting.
Features
Highly reliable 2-layer polysilicon CMOS flash
EEPROM process
Read and write operations using a 5 V single-voltage
power supply
Fast access time: 90, 120, and 150 ns
Low power dissipation
— Operating current (read): 30 mA (maximum)
— Standby current:
Highly reliable read/write
— Erase/write cycles:
— Data retention:
Address and data latches
Fast page rewrite operation
— 128 bytes per page
— Byte/page rewrite time:
— Chip rewrite time:
Automatic rewriting using internally generated Vpp
Rewrite complete detection function
— Toggle bit
— Data polling
Hardware and software data protection functions
All inputs and outputs are TTL compatible.
Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
Package
SOP 32-pin (525 mil) plastic package :
TSOP 32-pin (8
×
20 mm)plastic package :
20 μA (maximum)
10
4
/10
3
cycles
10 years
5 ms (typical)
5 s (typical)
LE28C1001M
LE28C1001T
Package Dimensions
unit: mm
3205-SOP32
unit: mm
3224-TSOP32
SANYO: TSOP32 (TYPE-I)
[LE28C1001T]
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
[LE28C1001M]
SANYO: SOP32