參數(shù)資料
型號: LC374500ST
廠商: Sanyo Electric Co.,Ltd.
英文描述: Internal Synchronization Silicon Gate 4M (524288-word x 8-bit) mask ROM Pin Compatible with Flash Memory
中文描述: 內(nèi)同步硅門4米(524288字× 8位)與掩膜ROM閃存引腳兼容
文件頁數(shù): 4/4頁
文件大小: 46K
代理商: LC374500ST
PS No. 5610-4/4
LC374500ST
This catalog provides information as of April, 1998. Specifications and information herein are subject to change
without notice.
I
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace
equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of
which may directly or indirectly cause injury, death or property loss.
I
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and
distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all
damages, cost and expenses associated with such use:
Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on
SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees
jointly or severally.
I
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Test Conditions
Input voltage amplitude
0.4 V to 2.8 V
Rise/fall time
5 ns
Input discrimination level
1.5 V
Output discrimination level
1.5 V
Output capacitance
See figure 1
*
: Includes the oscilloscope and jig capacitances.
Address input
Valid Address
Valid data
Data output
High impedance
Figure 1 Output Load Circuit
Timing Waveforms
Notes on System Design
This LSI adopts the ATD technique, in which operation starts when a change in either the CE or address inputs is
detected. This means that the output data immediately after power is applied is invalid. When using this LSI as program
memory for Z80 and similar microprocessors, applications must take into account the fact that valid data will not be
output after power is first applied unless the value of either the CE or at least one of the address lines is changed after the
power supply has stabilized.
Another point due to the use of the ATD technique is that this LSI is sensitive to input noise. Do not apply voltages
outside the allowable DC input levels for extended periods and do not apply input voltages with large noise components.
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