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參數(shù)資料
| 型號(hào)： | L6713A |
| 廠商： | Holtek Semiconductor Inc. |
| 英文描述： | 2/3 Phase controller with embedded drivers for Intel VR10, VR11 and AMD 6 bit CPUs |
| 中文描述： | 2 / 3為英特爾VR10，VR11和AMD的嵌入式驅(qū)動(dòng)器相控制器6位CPU |
| 文件頁數(shù)： | 24/64頁 |
| 文件大?。?/td> | 515K |
| 代理商： | L6713A |
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Power dissipation
L6713A
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Power dissipation
L6713A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power the device is going to dissipate in driving them in
order to avoid overcoming the maximum junction operative temperature. In addition, since
the device has an exposed pad to better dissipate the power, the thermal resistance
between junction and ambient consequent to the layout is also important: thermal pad
needs to be soldered to the PCB ground plane through several VIAs in order to facilitate the
heat dissipation.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
The first one (PDC) depends on the static consumption of the device through the supply pins
and it is simply quantifiable as follow (assuming to supply HS and LS drivers with the same
VCC of the device):
where N is the number of phases.
Drivers' power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency and total gate charge of the
selected MOSFETs. It can be quantified considering that the total power PSW dissipated to
switch the MOSFETs (easy calculable) is dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This
last term is the important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFETs results:
External gate resistors helps the device to dissipate the switching power since the same
power PSW will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device. When driving multiple MOSFETs in parallel, it is
suggested to use one gate resistor for each MOSFET.
P
DC
V
CC
I
CC
NI
CCDRx
NI
BOOTx
++
()
=
P
SW
NF
SW
Q
GHS
V
BOOT
Q
GLS
V
CCDRx
+
()
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6713A_0805 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2/3/4 phase controller with embedded drivers for Intel VR11.1 |
| L6713ATR | 功能描述:DC/DC 開關(guān)控制器 2/3 Phase controller RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| L6714 | 功能描述:功率驅(qū)動(dòng)器IC 4 Phase Controller RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6714TR | 功能描述:功率驅(qū)動(dòng)器IC 4 Phase Controller RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6716 | 制造商:STMicroelectronics 功能描述:DC DC Cntrlr Quad-OUT Sync Step Down 48-Pin VFQFPN EP Tray 制造商:STMicroelectronics 功能描述:HANDHELD & COMPUTER PM - Trays 制造商:STMicroelectronics 功能描述:2/3/4 Phase Controlr Embedded Driver |
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