參數(shù)資料
型號： L558
廠商： IXYS Corporation
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁數(shù)： 1/5頁
文件大?。?/td> 207K
代理商： L558
1 - 5
2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
3
VWI 20-06P1
Features
NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
AC drives
power supplies with power factor
correction
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
600
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
19
14
A
A
I
CM
V
CEK
V
= ±15 V; R
= 82
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
20
V
CES
A
t
(SCSOA)
V
= 720 V; V
GE
= ±15 V; R
G
= 82
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
73
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C
1.9
2.2
2.4
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.35 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.6
mA
mA
2.7
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
100
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
35
35
230
30
0.4
0.3
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 10 A
600
39
pF
nC
R
thJC
R
thJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 μm)
1.7 K/W
3.4
K/W
Inductive load, T
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
I
C25
V
CES
V
CE(sat) typ.
= 1.9 V
= 19 A
= 600 V
IGBT Module
Sixpack in ECO-PAC 2
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
www.ixys.net
S 9
G 1
L 9
N 5
A 1
F 3
C 1
X 18
W 14
K 10
N 9
R 5
A 5
H 5
Pin arangement see outlines
K 12
J 13
NTC
Preliminary data
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