參數(shù)資料
型號: L033MU01RI
廠商: Spansion Inc.
英文描述: 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 32兆位(4個M × 8位)的MirrorBit⑩3.0伏特,只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數(shù): 32/61頁
文件大小: 772K
代理商: L033MU01RI
30
Am29LV033MU
September 12, 2006
D A T A S H E E T
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6,
DQ2, or RY/BY# in the erasing sector. Refer to the
Write Operation Status
section for information on
these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure 7 illustrates the algorithm for the erase opera-
tion. Refer to the
Erase and Program Operations
ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Figure 7.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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