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參數(shù)資料
| 型號(hào)： | L033MU01RI |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 32兆位（4個(gè)M × 8位）的MirrorBit⑩3.0伏特，只有統(tǒng)一部門閃存記憶體與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 28/61頁(yè) |
| 文件大?。?/td> | 772K |
| 代理商： | L033MU01RI |
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26
Am29LV033MU
September 12, 2006
D A T A S H E E T
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
■
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
■
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
■
Write an Address/Data pair to a different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
■
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Accelerated Program
The device offers accelerated program operations
through the ACC pin. When the system asserts V
HH
on
the ACC pin, the device automatically enters the Un-
lock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command se-
quence. The device uses the higher voltage on the
ACC pin to accelerate the operation.
Note that the
ACC pin must not be at V
HH
for operations other than
accelerated programming, or device damage may re-
sult. In addition, the ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
Figure 5 illustrates the algorithm for the program oper-
ation. Refer to the
Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L033MU01VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU11VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12RI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| L033MU12VI | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
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