- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373158 > KM616FR1000Z (SAMSUNG SEMICONDUCTOR CO. LTD.) 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM616FR1000Z |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 64K的× 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（64K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 134K |
| 代理商： | KM616FR1000Z |
Revision 0.1
April 1997
CMOS SRAM
KM616FS1000Z, KM616FR1000Z Family
Preliminary
DC AND OPERATING CHARACTERISTICS
1) - Commercial Product
T
A
=0 to 70
°
C, Vcc=2.3(Min) ~ 3.3V(Max) for 616FS1000Z Family, Vcc=1.8V(Min) ~ 2.7V(Max)V for 616FR1000Z Family
- Industrial Product
T
A
=-40 to 85
°
C, Vcc=2.3V(Min) ~ 3.3V(Max) for 616FS1000ZI Family, Vcc=1.8V(Min)~2.7V(Max) for 616FR1000ZI Family.
2) The value has difference by
±μ
A
,
Measured at Vcc=3.3V(Max)
3) The value is not 100% tested but obtained statistically at Temp=25
°
C
4) - The value is measured at Vcc=3.0V
±
0.3V
- I
CC2
=40mA with 120ns cycle at Vcc=2.5V
±
0.2V, but this value is not 100% tested but obtained statistically.
- I
CC2
=25mA with 300ns cycle at Vcc=2.0V
±
0 .2V, but this value is not 100% tested but obtained statistically.
5) The value is measured at Vcc=3.0V
±
0.3V. The value measured at Vcc=2.5/2.0V is under the value of Vcc=3.0V
Item
Symbol
Test Conditions
1)
Min
Typ**
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
μ
A
Operating power supply current
I
CC
CS=V
IL
V
IN
=V
IH
or V
IL
, I
IO
=0mA
Read
-
-
10
5)
mA
Write
-
-
20
5)
Average operating current
I
CC1
Cycle time=1
μ
s100%duty
CS
≤
0.2V
Read
-
-
10
5)
mA
Write
-
-
20
5)
I
CC2
Min cycle, 100% duty
I
IO
=0mA, CS=V
IH
Vcc=3.3V@100ns
-
-
80
4)
mA
Vcc=2.7V@150ns
-
-
50
Vcc=2.2V@300ns
-
-
25
Output low voltage
V
OL
I
OL
Vcc=3.0V
2.1mA
-
-
0.4
V
Vcc=2.5V
0.5mA
-
-
0.4
Vcc=2.0V
0.33mA
-
-
0.4
Output high voltage
V
OH
I
OH
Vcc=3.0V
-1.0mA
2.4
-
-
V
Vcc=2.5V
-0.5mA
2.0
-
-
Vcc=2.0V
-0.44mA
1.6
-
-
Standby Current (TTL)
I
SB
CS=V
IH
-
-
0.3
mA
Standby
Current
(CMOS)
KM616FS1000Z
KM616FR1000Z
KM616FS1000ZI
KM616FR1000ZI
I
SB1
CS
≥
Vcc-0.2V
Other inputs =0~Vcc
Low Low Power
-
0.05
3)
5
2)
μ
A
Low Low Power
-
0.05
3)
5
2)
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616FS1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2000Z | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR2000Z | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2000 | 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6-16S-10PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SY | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。