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參數(shù)資料
| 型號(hào)： | KM616FR1000Z |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 64K的× 16位超低功耗和低電壓的CMOS全靜態(tài)RAM（64K的× 16位超低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 134K |
| 代理商： | KM616FR1000Z |
Revision 0.1
April 1997
CMOS SRAM
KM616FS1000Z, KM616FR1000Z Family
Preliminary
* See last page for package dimension.
LB
OE
A
0
A
1
A
2
NC
I/O
9
UB
A
3
A
4
CS
I/O
1
I/O
10
I/O
11
A
5
A
6
I/O
2
I/O
3
V
SS
I/O
12
NC
A
7
I/O
4
V
CC
V
CC
I/O
13
NC
NC
I/O
5
V
SS
I/O
15
I/O
14
A
14
A
15
I/O
6
I/O
7
I/O
16
NC
A
12
A
13
WE
I/O
8
NC
A
8
A
9
A
10
A
11
NC
64Kx16 bit Super Low Power and Low Voltage Full CMOS SRAM
with 48-CSP(Chip Scale Package)
The KM616FS1000Z and KM616FR1000Z family are fabri-
cated by SAMSUNG
′
s advanced Full CMOS process technol-
ogy. The family support various operating temperature ranges
and has very small size with 0.75 ball pitch and 6 x 8 ball array.
The family also support low data retention voltage for battery
back-up operation with low data retention current.
GENERAL DESCRIPTION
FEATURES SUMMARY
ü
Process Technology : 0.4
μ
m Full CMOS
ü
Organization :64Kx16
ü
Power Supply Voltage
KM616FS1000Z Family : 2.3V(Min) ~ 3.3V(Max)
KM616FR1000Z Family : 1.8V(Min) ~ 2.7V(Max)
ü
Low Data Retention Voltage : 1.5V(Min)
ü
Three state output status and TTL Compatible
ü
Package Type : 48-CSP with 0.75mm ball pitch
48-CSP PIN TOP VIEW
Name
A
0
~A
15
WE
CS
OE
I/O
1
~I/O
16
Data Inputs/Out
p
uts
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Name
LB
UB
Vcc
Vss
N.C.
Function
Lower Byte(I/O
1
~ 8
)
Upper Byte(I/O
9 ~ 16
)
Power
Ground
No Connection
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
* The parameter is measured with 30pF test load.
Product
Family
Operating
Temp.Range
Vcc Range
(min~max)
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
)
Operating
(I
CC2
)
KM616FS1000Z
Commercial
(0~70
°
C)
2.3~3.3V
100*@V
CC
=3.0
±
0.3V
150*@V
CC
=2.5
±
0.2V
5
μ
A
(Max)
80mA(Max)
50mA(Max)
48-CSP
(6x8 ball area
with 0.75mm
ball pitch)
KM616FR1000Z
1.8~2.7V
300*@V
CC
=2.0
±
0.2V
100*@V
CC
=3.0
±
0.3V
150*@V
CC
=2.5
±
0.2V
25mA(Max)
80mA(Max)
50mA(Max)
KM616FS1000ZI
Industrial
(-40~85
°
C)
2.3~3.3V
5
μ
A
(Max)
KM616FR1000ZI
1.8~2.7V
300*@V
CC
=2.0
±
0.2V
25mA(Max)
A
Memory
Array
A
0
~A
15
I/O
1
~
8
CS
D
B
LB
UB
WE
D
1
2
3
4
5
6
A
B
C
D
E
F
G
H
I/O
9
~
16
Ctrl
OE
SAMSUNG ELECTRONICS CO., LTD.
reserves the right
to change products and specifications without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616FS1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2000Z | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR2000Z | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2000 | 128K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
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| KM6-16S-10SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SY | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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