參數(shù)資料
型號(hào)： KM23C64000T
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M位 (8Mx8 /4Mx16) CMOS掩膜ROM)
中文描述： 6400位（8Mx8 / 4Mx16）的CMOS掩模ROM（6400位（8Mx8 / 4Mx16）的CMOS掩膜光盤(pán)）
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 57K
代理商： KM23C64000T
KM23C64000T
CMOS MASK ROM
Pin Name
Pin Function
A0 - A21
Address Inputs
Q0 - Q14
Data Outputs
Q15 /A-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
VCC
Power (+5V)
VSS
Ground
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
The KM23C64000T is a fully static mask programmable ROM
fabricated using silicon gate CMOS process technology, and is
organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23C64000T is packaged in a 44-TSOP2.
GENERAL DESCRIPTION
FEATURES
Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 70mA(Max.)
Standby : 50
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package : KM23C64000T : 44-TSOP2-400
A21
X
AND
DECODER
BUFFERS
A0
Y
AND
DECODER
BUFFERS
MEMORY CELL
SENSE AMP.
CONTROL
LOGIC
MATRIX
(4,194,304x16/
8,388,608x8)
BUFFERS
A-1
CE
OE
BHE
.
Q0/Q8
Q7/Q15
. . .
PIN CONFIGURATION
A21
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
VSS
OE
Q0
Q8
Q1
Q9
Q4
Q12
Q5
Q13
Q6
VSS
Q14
Q7
Q15/A-1
TSOP2
KM23C64000T
FUNCTIONAL BLOCK DIAGRAM
1
2
44
43
3
4
42
41
5
6
40
39
7
8
38
37
9
10
36
35
11
12
34
33
13
14
32
31
15
16
30
29
17
18
28
27
19
20
26
25
21
22
24
23
Q2
Q10
Q3
Q11
A20
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
VCC
相關(guān)PDF資料
PDF描述
KM23C64000 64M-Bit (4Mx16) CMOS Mask ROM(64M位(4Mx16) CMOS掩膜ROM)
KM23C8000DG 8M-Bit (1Mx8) CMOS Mask ROM(8M位(1Mx8) CMOS掩膜ROM)
KM23C8000D 8M-Bit (1Mx8) CMOS Mask ROM(8M位(1Mx8) CMOS掩膜ROM)
KM23V16000DG 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM(16M位(2M×8/1M×16) CMOS掩膜ROM)
KM23V16000D 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM(16M位(2M×8/1M×16) CMOS掩膜ROM)
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