參數(shù)資料
型號(hào): KM23C64000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M-Bit (4Mx16) CMOS Mask ROM(64M位(4Mx16) CMOS掩膜ROM)
中文描述: 6400位(4Mx16)的CMOS掩模ROM(6400位(4Mx16)的CMOS掩膜光盤(pán))
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 58K
代理商: KM23C64000
KM23C64000
CMOS MASK ROM
Pin Name
Pin Function
A0 - A21
Address Inputs
Q0 - Q15
Data Outputs
OE
Output Enable
VCC
Power (+5V)
VSS
Ground
64M-Bit (4Mx16) CMOS MASK ROM
The KM23C64000 is a fully static mask programmable ROM
organized 4,194,304 x 16 bit. It is fabricated using silicon-gate
CMOS process technology.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor and
The KM23C64000 is packaged in a 42-DIP.
GENERAL DESCRIPTION
FEATURES
4,194,304 x 16 bit organization
Fast access time : 100ns(Max.)
Supply voltage : single +5V
Current consumption
Operating : 70mA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23C64000 : 42-DIP-600
A21
X
AND
DECODER
BUFFERS
A0
Y
AND
DECODER
BUFFERS
MEMORY CELL
SENSE AMP.
CONTROL
LOGIC
MATRIX
(4,194,304x16)
BUFFERS
OE
.
Q0
Q15
. . .
PIN CONFIGURATION
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
A21
VSS
OE
Q0
Q8
Q1
Q9
Q4
Q12
Q5
Q13
Q6
VSS
Q14
Q7
Q15
DIP
KM23C64000
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
42
41
5
6
40
39
7
8
38
37
9
10
36
35
11
12
34
33
13
14
32
31
15
16
30
29
17
18
27
28
19
20
25
24
21
23
22
Q2
Q10
Q3
Q11
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
A20
VCC
26
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