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| 型號(hào)： | KBE00S009M-D411 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| 中文描述： | 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2 |
| 文件頁(yè)數(shù)： | 66/86頁(yè) |
| 文件大?。?/td> | 1898K |
| 代理商： | KBE00S009M-D411 |
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MCP MEMORY
66
KBE00S009M-D411
Revision 1.0
May 2005
*NOTE:
1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.
2. Illegal to bank in specified state ; Function may be Iegal in the bank indicated by BA, depending on the
state of that bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and A
10
/AP).
5. Illegal if any bank is not idle.
Abbreviations : RA = Row Address BA = Bank Address
NOP = No Operation Command CA = Column Address AP = Auto Precharge
FUNCTION TRUTH TABLE (TABLE 1)
Current
CS
RAS
CAS
WE
BA
Address
Action
Note
Precharging
H
X
X
X
X
X
NOP --> Idle after t
RP
L
H
H
H
X
X
NOP --> Idle after t
RP
L
H
H
L
X
X
ILLEGAL
2
L
H
L
X
BA
CA
ILLEGAL
2
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
A
10
/AP
NOP --> Idle after t
RP
4
Row
Activating
L
L
L
X
X
X
ILLEGAL
H
X
X
X
X
X
NOP --> Row Active after t
RCD
L
H
H
H
X
X
NOP --> Row Active after t
RCD
L
H
H
L
X
X
ILLEGAL
2
L
H
L
X
BA
CA
ILLEGAL
2
L
L
H
H
BA
RA
ILLEGAL
2
L
L
H
L
BA
A
10
/AP
ILLEGAL
2
L
L
L
X
X
X
ILLEGAL
Refreshing
H
X
X
X
X
X
NOP --> Idle after t
RC
L
H
H
X
X
X
NOP --> Idle after t
RC
L
H
L
X
X
X
ILLEGAL
L
L
H
X
X
X
ILLEGAL
L
L
L
X
X
X
ILLEGAL
Mode
Register
Accessing
H
X
X
X
X
X
NOP --> Idle after 2 clocks
L
H
H
H
X
X
NOP --> Idle after 2 clocks
L
H
H
L
X
X
ILLEGAL
L
H
L
X
X
X
ILLEGAL
L
L
X
X
X
X
ILLEGAL
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