參數(shù)資料
型號(hào): KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 19/86頁(yè)
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
19
KBE00S009M-D411
Revision 1.0
May 2005
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(4Cycle)
80h
Data Input
CE
CLE
ALE
WE
I/O
X
Data Input
CE don’t-care
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528bytes page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(4Cycle)
00h
CE
CLE
ALE
WE
I/O
X
Data Output(sequential)
CE don’t-care
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
X
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
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