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參數(shù)資料
| 型號： | KB8821 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 10uF; Voltage: 35V; Case Size: 3.2x6 mm; Packaging: Tape & Reel |
| 中文描述： | 頻率合成器 |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 237K |
| 代理商： | KB8821 |
PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
KB8821/22/23
7
99-06-15
ELECTRICAL CHARACTERISTICS
(V
DD
=3.0V, V
P
=3.0V, -40
o
C
￡
T
a
￡
85
o
C
Unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Power Supply Voltage
V
DD
2.7
3.0
4.0
V
V
P
V
DD
3.0
4.0
Power Supply
Current
KB8823 RF + IF
I
DD
V
DD
=2.7V to 4.0V
5.5
mA
KB8823 RF Only
4.0
KB8822 RF + IF
4.5
KB8822 RF Only
3.0
KB8821 RF + IF
3.5
KB8821 RF Only
2.0
KB882x IF Only
1.5
Power down Current
I
PWDN
V
DD
=3.0V
1.0
10
μ
A
Digital inputs : CLOCK, DATA and LE
High-Level Input Voltage
V
IH
V
DD
=2.7V to 4.0V
0.7V
DD
V
Low-Level Input Voltage
V
IL
V
DD
=2.7V to 4.0V
0.3V
DD
V
High-Level Input Current
I
IH
V
IH
= V
DD
=4.0V
-1.0
+1.0
μ
A
Low-Level Input Current
I
IL
V
IL
=0V, V
DD
=4.0V
-1.0
+1.0
μ
A
Reference Divider Input : OSCin
Input Current
I
IHR
V
IH
= V
DD
=4.0V
+100
μ
A
I
ILR
V
IL
=0V, V
DD
=4.0V
-100
μ
A
Digital Output : foLD
High Level Output Voltage
V
OH
Iout = -500
μ
A
V
DD
-0.4
V
Low Level Output Voltage
V
OL
Iout = +500
μ
A
0.4
V
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