- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373103 > KB8821 (SAMSUNG SEMICONDUCTOR CO. LTD.) Tantalum Molded Capacitor; Capacitance: 10uF; Voltage: 35V; Case Size: 3.2x6 mm; Packaging: Tape & Reel PDF資料下載
參數(shù)資料
| 型號： | KB8821 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Tantalum Molded Capacitor; Capacitance: 10uF; Voltage: 35V; Case Size: 3.2x6 mm; Packaging: Tape & Reel |
| 中文描述： | 頻率合成器 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大小： | 237K |
| 代理商： | KB8821 |
PRELIMINARY SPECIFICATION (V1.5)
FREQUENCY SYNTHESIZER
KB8821/22/23
2
99-06-15
BLOCK DIAGRAM
- Continued
Figure 2. Detailed block diagram
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
foLD
Data Out
Multiplexer
RF
LD
RF
Phase
Detector
RF
Charge
Pump
IF
LD
IF
Phase
Detector
IF
Charge
Pump
+
–
RF Prescaler
Prescaler
Control
RF
Programmable
Counter
RF N-Latch
RF R-Latch
RF Reference
Counter
IF Reference
Counter
20-bit Shift Register
IF R-Latch
IF N-Latch
2-bit
Control
–
+
IF Prescaler
Prescaler
Control
IF
Counter
Programmable
V
DD
1
V
P
1
CPoRF
GND
f
in
RF
f
in
RF
GND
OSCin
GND
foLD
V
DD
2
V
P
2
CPoIF
GND
f
in
IF
f
in
IF
GND
LE
DATA
CLOCK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KB8822 | FREQUENCY SYNTHESIZER |
| KB8825 | 1.1GHZ DUAL PLL |
| KBE00F005A | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00F005A-D411 | 512Mb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M | 1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KB8822 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FREQUENCY SYNTHESIZER |
| KB8823 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FREQUENCY SYNTHESIZER |
| KB8825 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1.1GHZ DUAL PLL |
| KB8C5 | 制造商:IDEC Corporation 功能描述:DISTR. BOX/SIST. DI DISTR. |
| KB8D | 制造商:IDEC Corporation 功能描述:DISTR. BOX/SIST. DI DISTR. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。