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參數(shù)資料
| 型號： | K4S281633D-N1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx16 SDRAM 54CSP |
| 中文描述： | 8M × 16位SDRAM的54CSP |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 71K |
| 代理商： | K4S281633D-N1L |
K4S281633D-RL(N)
Rev. 0.6 Nov. 2001
CMOS SDRAM
Preliminary
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
=-25
°
C ~ 70
°
C (Commercial), -25
°
C ~ 85
°
C (Extended))
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
80
75
75
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.5
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
12
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
7
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
7
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
23
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
20
mA
Operating Current
(Burst Mode)
I
CC4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
130
130
110
mA
1
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
170
170
155
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
-RL
500
uA
3
-RN
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281633D-RL**
4. K4S281633D-RN**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Notes :
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|---|---|
| K4S281633D-N75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx16 SDRAM 54CSP |
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| K4S283233F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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