- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373066 > K4S281633D-N1L (SAMSUNG SEMICONDUCTOR CO. LTD.) 8Mx16 SDRAM 54CSP PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S281633D-N1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx16 SDRAM 54CSP |
| 中文描述： | 8M × 16位SDRAM的54CSP |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | K4S281633D-N1L |
K4S281633D-RL(N)
Rev. 0.6 Nov. 2001
CMOS SDRAM
Preliminary
Revision History
Revision 0.0 (February 21. 2001, Target)
First generation of 128Mb Low Power SDRAM without special function (V
DD
3.0V, V
DDQ
3.0V)
Revision 0.1 (June 4. 2001, Target)
Addition of DC Current value.
Revision 0.2 (June 20. 2001, Target)
Changed device name from low power sdram to mobile dram.
Revision 0.3 (August 1. 2001, Target)
Change of tSAC from 6ns to 6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part.
Change of tOH from 3ns to 3.5ns.
Change V
IH
min. from 2.0 V to 0.8xV
DDQ
and V
OH
min. from 2.4V to 0.9xV
DDQ.
Revision 0.4 (October 6. 2001, Preliminary)
Changed DC current.
Changed of CL2 tSAC from 6ns to 7ns and CL3 tSAC from 6.5ns to 7ns for -75 part.
Changed of CL2 tSAC from 6.5ns to 8ns and CL1 tSAC from 18ns to 20ns for -1L part.
Changed of tOH from 3ns to 2.5ns.
Changed of tSS from 2.5ns to 2.0ns for -75 part and from 3.0ns to 2.5ns for -1L part.
Integration of VDDQ 1.8V device and 2.5V device.
Changed VIH min. from 0.8xVDDQ to 0.9xVDDQ and VOH min. from 0.9xVDDQ to 0.95xVDDQ.
Changed VIL max. from 0.8V to 0.3V and VOL min. from 0.4V to 0.2V.
Changed IOH from -0.1mA to -2mA and IOL from 0.1mA to 2mA.
Erased -15 bin and added -1H bin.
Revision 0.5 (October 12. 2001, Preliminary)
Changed VIH min. from 0.9xVDDQ to 2.0V and VOH min. from 0.95xVDDQ to 2.4V.
Changed VIL max. from 0.3V to 0.8V and VOL min. from 0.2V to 0.4V.
Revision 0.6 (November 7. 2001, Preliminary)
Changed VIH min. from 2.0V to 2.2V and VIL max. from 0.8V to 0.5V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S281633D-N75 | 8Mx16 SDRAM 54CSP |
| K4S510432B-TC | 512Mb B-die SDRAM Specification |
| K4S510432B-TC75 | 512Mb B-die SDRAM Specification |
| K4S510432B-TCL75 | 512Mb B-die SDRAM Specification |
| K4S510832B-TC75 | 512Mb B-die SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S281633D-N75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx16 SDRAM 54CSP |
| K4S281633D-RL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8Mx16 SDRAM 54CSP |
| K4S281633DRN75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S283233F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S283233F-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。