參數(shù)資料
型號(hào): K4S281632B-N
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
中文描述: 200萬× 16 × 4銀行同步DRAM在sTSOP
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 145K
代理商: K4S281632B-N
SDRAM 128Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.4 February. 2004
Revision History
Revision 1.0 (November, 2002)
- First release.
Revision 1.1 (April, 2003)
- x4/x8/x16 Merged spec.
Revision 1.2 (May, 2003)
- Delete -TC(L)7C
Revision 1.3 (January, 2004)
- Modified ICC4 current from 110mA -> 140mA at x16
- Modified tSH from 0.8ns -> 1.0ns at 166MHz.
Revision 1.4 (February, 2004)
- Corrected typo.
相關(guān)PDF資料
PDF描述
K4S280432E 128Mb E-die SDRAM Specification
K4S280432E-TC75 128Mb E-die SDRAM Specification
K4S280832F-TC75 RES, 16.9, 1/16W, TKF, 1%, 0603
K4S280832F-TCL75 128Mb F-die SDRAM Specification
K4S280832F-UL75 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
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K4S281632B-TC1H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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