- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373064 > K4M56163PE-F1L (SAMSUNG SEMICONDUCTOR CO. LTD.) 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA PDF資料下載
參數(shù)資料
| 型號(hào)： | K4M56163PE-F1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 4米× 16 × 4銀行在54FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 112K |
| 代理商： | K4M56163PE-F1L |
K4M56163PE - R(B)G/F
February 2004
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-90
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
45
40
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.3
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.3
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
10
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
5
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
65
60
mA
1
Refresh Current
I
CC
5
t
ARFC
≥
t
ARFC
(min)
80
80
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
TCSR Range
Max 40
Max 85/70
°
C
Full Array
150
400
uA
1/2 of Full Array
125
300
1/4 of Full Array
115
250
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M56163PE-F90 | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-R | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-RG | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M563233D | 8Mx32 Mobile SDRAM 90FBGA |
| K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M56163PE-F90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-RG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。