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參數(shù)資料
| 型號： | K4F660811B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 8米× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4F660811B |
CMOS DRAM
K4F660811B,K4F640811B
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Refresh period (4K, Normal)
t
REF
64
64
64
ms
Refresh period (8K, Normal)
t
REF
64
64
64
ms
Write command set-up time
t
WCS
0
0
0
ns
7
CAS to W delay time
t
CWD
32
36
38
ns
7
RAS to W delay time
t
RWD
67
73
83
ns
7
Column address to W delay time
t
AWD
t
CPWD
43
48
53
ns
7
CAS precharge W delay time
48
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
t
CSR
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
t
CHR
10
5
5
ns
RAS to CAS precharge time
t
RPC
5
5
5
ns
Access time from CAS precharge
t
CPA
t
PC
26
30
35
ns
3
Fast Page mode cycle time
31
35
40
ns
Fast Page mode read-modify-write cycle time
t
PRWC
70
76
85
ns
CAS precharge time (Fast Page cycle)
t
CP
9
10
10
ns
RAS pulse width (Fast Page cycle)
t
RASP
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
t
RHCP
28
30
35
ns
OE access time
t
OEA
t
OED
12
13
15
ns
OE to data delay
12
13
13
ns
Output buffer turn off delay time from OE
t
OEZ
0
13
0
13
0
13
ns
6
OE command hold time
t
OEH
12
13
15
ns
Write command set-up time (Test mode in)
t
WTS
10
10
10
ns
11
Write command hold time (Test mode in)
t
WTH
15
15
15
ns
11
W to RAS precharge time (C-B-R refresh)
t
WRP
t
WRH
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
t
RASS
t
RPS
t
CHS
100
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
80
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
13,14,15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F640812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-L | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TC | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F660812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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