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參數資料
| 型號： | K4F660811B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 8米× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數： | 4/20頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4F660811B |
CMOS DRAM
K4F660811B,K4F640811B
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
K4F660811B
K4F640811B
I
CC1
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC2
Normal
Don
′
t care
2
2
mA
I
CC3
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
I
CC4
Don
′
t care
-45
-50
-60
70
60
50
80
70
60
mA
mA
mA
I
CC5
Normal
Don
′
t care
1
1
mA
I
CC6
Don
′
t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
相關PDF資料 |
PDF描述 |
|---|---|
| K4F640812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-L | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TC | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4F660812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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