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參數(shù)資料
| 型號(hào)： | JANTXV2N6849U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | JANTXV2N6849U |
8
www.irf.com
IRFE9130, JANTX-, JANTXV-, JANS-, 2N6849U Device
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
1/98
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
ISD
≤
-6.5A, di/dt
≤
-390 A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested R
G
= 2.35
@ VDD = -25 V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL
2
) ]
Peak IL = -6.5A, VGS =10 V, 25
≤
RG
≤
200
K/W = °C/W
Notes:
Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package
IR Case Style Leadless Chip Carrier (LCC)
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