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參數(shù)資料
| 型號： | JANS2N6851U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場效應(yīng)管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 134K |
| 代理商： | JANS2N6851U |
IRFE9230
JANTX2N6851U
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6851U
HEXFET
TRANSISTOR
[REF:MIL-PRF-19500/564]
JANS2N6851U
www.irf.com
1
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRFE9230
-200V
0.80
-4.0A
Features:
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
n
Small footprint
n
Surface Mount
n
Lightweight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U
Units
-4.0
-2.4
-16
25
0.20
±20
171
-1.1
-55 to 150
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
W
W/K
V
mJ
V/ns
VGS
EAS
dv/dt
TJ
TSTG
300 ( for 5 seconds)
0.42 (typical)
g
P-CHANNEL
PD - 9.1717
-200Volt, 0.80
, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
o
C
A
3/25/98
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