參數(shù)資料
型號: JANTXV2N5666S
英文描述: TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39
中文描述: 晶體管|晶體管| npn型| 200伏五(巴西)總裁| 5A條一(c)| TO - 39封裝
文件頁數(shù): 8/19頁
文件大?。?/td> 103K
代理商: JANTXV2N5666S
MIL-PRF-19500/512E
16
NOTES:
1.
The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source Z
shall be 50
.
2.
Sampling oscilloscope: ZIN ≥ 100 k; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns.
FIGURE 6. Delay and rise time, test circuit.
NOTES:
1.
The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50
.
2.
Sampling oscilloscope: ZIN ≥ 100 k; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns.
FIGURE 7. Storage and fall time, test circuit.
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