- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299234 > JANTXV2N5666S TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 PDF資料下載
參數(shù)資料
| 型號： | JANTXV2N5666S |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁| 5A條一（c）| TO - 39封裝 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N5666S |
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N5667 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-5 |
| JANTXV2N5667S | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 5A I(C) | TO-39 |
| JANHCA2N3439 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-5 |
| JANHCA2N3440 | TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-5 |
| JANHCA2N3743 | TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50MA I(C) | TO-39 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N5666U3 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N5667 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 300V 5A 3-Pin TO-5 |
| JANTXV2N5667S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 5A 3PIN TO-39 - Bulk |
| JANTXV2N5671 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 90V 30A 3PIN TO-3 - Bulk |
| JANTXV2N5672 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 30A 3PIN TO-3 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。