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參數(shù)資料
| 型號(hào)： | JANTXV2N3996 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至111 |
| 文件頁(yè)數(shù)： | 7/20頁(yè) |
| 文件大小： | 128K |
| 代理商： | JANTXV2N3996 |
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MIL-PRF-19500/560E
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 4
Small - signal short -
circuit forward -
current transfer ratio
3306
VCE = 10 V dc; IC = 0.5 A dc;
f = 10 MHz
|hfe|
3
15
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0; 100 kHz
≤ f ≤ 1 MHz
Cobo
250
pF
Input capacitance
(output open -
circuited)
3240
VBE = 2.0 V dc; IC = 0; 100 kHz
≤ f ≤ 1 MHz (see 4.5.2)
Cibo
1,000
pF
Pulse response
Pulse delay time
3251
See figure 6
td
100
ns
Pulse rise time
3251
See figure 6
tr
100
ns
Pulse storage time
3251
See figure 7
ts
2
s
Pulse fall time
3251
See figure 7
tf
200
ns
Subgroup 5
Safe operating area
(continuous dc)
3051
TC = +25°C; t ≥ 0.5 s; 1 cycle
Test 1
VCE = 2.0 V dc; IC = 5.0 A dc
Test 2
Test 3
End-point electrical
measurements
VCE = 5.0 V dc; IC = 2.0 A dc
VCE = 90 V dc; IC = 55 mA dc
See table I, group A, subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for laser marked devices.
5/ Not required for JANS devices.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| JANTXV2N3996P | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 4PIN TO-111 - Bulk |
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