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參數(shù)資料
| 型號： | JANTXV2N3996 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至111 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANTXV2N3996 |
MIL-PRF-19500/560E
9
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO-39), figures 2, 3, and 4 (JANHC and JANKC) and figure 5 for U3 (TO–276AA)
devices herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with in
MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the
acquisition document (see 6.2).
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer,
marking may be omitted from the body, but shall be retained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group
A herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N3997 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111 |
| JANTXV2N3998 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANTXV2N3999 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA |
| JANTXV2N5339 | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-39 |
| JANKCA1N6677 | 0.2 A, SILICON, SIGNAL DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N3996P | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 4PIN TO-111 - Bulk |
| JANTXV2N3997 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N3998 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N3999 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk |
| JANTXV2N4029 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
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