參數(shù)資料
型號(hào)： JANTX2N6800U
廠商： International Rectifier
英文描述： HEXFET Transistor(HEXFET 晶體管)
中文描述： 的HEXFET晶體管（之HEXFET晶體管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 133K
代理商： JANTX2N6800U
IRFE330, JANTX-, JANTXV-, 2N6800U Device
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
—
Typ
—
0.35
Max Units
—
—
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
2.4
—
—
—
—
—
—
—
—
1.0
1.15
4.0
—
25
250
VGS = 10V, ID = 2.0A
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250μA
VDS > 15V, IDS = 2.0A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20 V
VGS = -20V
VGS = 10V, ID = 3.0A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.8
100
-100
33
5.8
17
30
35
55
35
—
nC
VDD = 200V, ID = 3.0A,
RG = 7.5
LS
Internal Source Inductance
—
4.3
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
660
190
68
—
—
—
VGS = 0V, VDS = 25 V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
3.0
12
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
700
6.2
V
ns
μC
T
j
= 25°C, IS = 3.0A, VGS = 0V
Tj = 25°C, IF = 3.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
nA
nH
ns
Measured fromdrain pad to
die.
Measured fromcenter of
source pad to the end of
source bonding wire.
Modified MOSFET symbol show-
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
5.0
K/W
RthJPCB
Junction-to-PC Board
—
—
19
Soldered to a copper clad PC board
Details of notes
through
are on the last page
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