參數(shù)資料
型號(hào)： JANTX2N6847
廠商： International Rectifier
英文描述： HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管）
文件頁數(shù)： 1/6頁
文件大?。?/td> 123K
代理商： JANTX2N6847
Product Summary
Part Number
JANTX2N6847
JANTXV2N6847
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
P-CHANNEL
Provisional Data Sheet No. PD-9.553B
-200 Volt, 1.5
HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6847
JANTXV2N6847
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9220]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
JANTX2N6847, JANTXV2N6847
Units
-2.5
-1.6
-10
20
0.16
±20
-5.0
-55 to 150
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
W
W/K
V
V/ns
VGS
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
Weight
g
o
C
A
-2.5A
1.5
-200V
相關(guān)PDF資料
PDF描述
JANTX2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTXV2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANS2N6849U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
JANTX2N6849 HEXFET POWER MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管)
JANTX2N6851U HEXFET Transistor(HEXFET MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTX2N6847U 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 2.1A 18PIN LCC - Bulk
JANTX2N6849 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET (PFET) - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 100V 6.5A TO-205AF 制造商:International Rectifier 功能描述:Single P-Channel 100 V 25 W 34.8 nC Hexfet Transistor Through Hole - TO205 制造商:Microsemi 功能描述:Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
JANTX2N6849U 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 18LLCC - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 100V 6.5A 18-LCC 制造商:International Rectifier 功能描述:HEXFET, HIREL,QPL,-100V, -6.5A, 0.30 OHM
JANTX2N685 制造商:Microsemi Corporation 功能描述:THYRISTOR SILICON PWR TO-208AA
JANTX2N6851 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 4A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 4A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 200 V 25 W 34.8 nC Hexfet Transistors Through Hole - TO-39
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