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參數(shù)資料
| 型號： | JANTX2N3227 |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 200mA的一（c）|到18 |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JANTX2N3227 |
MIL-PRF-19500/512E
4
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.70
19.05
7, 8, 12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
Q
.050
1.27
5
TL
.029
.045
0.74
1.14
3, 4
TW
.028
.034
0.71
0.86
3
r
.010
0.18
10
P
.100
2.54
α
45
°TP
45
°TP
6
NOTES:
1.
Dimension are in inches.
2.
Metric equivalents are given for general information only.
3.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4.
Dimension TL measured from maximum HD.
5.
Body contour optional within zone defined by HD, CD, and Q.
6.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC)
relative to tab at MMC. The device may be measured by direct methods.
7.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8.
All three leads.
9.
The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to
θx symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.
FIGURE 2. Physical dimensions (type 2N4033) (TO - 39).
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PDF描述 |
|---|---|
| JANTX2N3227UB | BJT |
| JANTX2N3902 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2.5A I(C) | TO-3 |
| JANTX2N4029 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-18 |
| JANTX2N4033 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 |
| JANTX2N4033UA | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX2N3227UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANTX2N3250A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.2A 3PIN TO-39 - Bulk |
| JANTX2N3251AUB | 功能描述:TRANS PNP 60V 0.2A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/323 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:200mA 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:500mV @ 5mA，50mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 10mA，1V 功率 - 最大值:360mW 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，無引線 供應(yīng)商器件封裝:UB 標(biāo)準(zhǔn)包裝:1 |
| JANTX2N3330 | 制造商:Motorola Inc 功能描述: |
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