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參數資料
| 型號： | JANSR2N7424U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | JANSR2N7424U |
IRHNA9064, IRHNA93064 Devices
www.irf.com
3
Table 2. High Dose Rate
&'
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
-48
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
-48
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
-800
—
—
—
—
—
—
0.8
-100
-160
—
—
—
—
A
Radiation Performance of Rad Hard HEXFETs
IInternational Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier com
prises three radiation environments.
Every manufacturing lot is tested in a low dose rate (to-
tal dose) environment per MIL-STD-750, test method
1019 condition A. International Rectifier has imposed a
standard gate condition of -12 volts per note 5 and a V
bias condition equal to 80% of the device rated voltage
per note 6. Pre- and post- irradiation limits of the de-
vices irradiated to 1 x 10
5
Rads (Si) are identical and
are presented in Table1,column1, IRHNA9064.Post-ir-
radiation limits of the devices irradiated to 3 x 10
5
Rads
(Si) are presented in Table 1, column 2, IRHNA93064.
The values in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
Table 1. Low Dose Rate
()
Parameter
IRHNA9064IRHNA93064
100K Rads (Si) 300K Rads (Si)
Units
Min
Max
Min
-60
—
-60
-2.0
-4.0
-2.0
—
-100
—
—
100
—
—
-25
—
—
.045
—
Test Conditions
*
Max
—
-5.0
-100
100
-25
.045
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
&%
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
&%
On-State Resistance One
Diode Forward Voltage
&%
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= -12V, I
D
=-30A
nA
μA
V
SD
—
-3.0
—
-3.0
V
TC = 25°C, IS = -48A,V
GS
= 0V
post-irradiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 3 x 10
5
Rads (Si) the
only parametric limit change is V
GS(th)
maximum.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2). International Rectifier radia-
tion hardened P-Channel HEXFETs are considered
to be neutron-tolerant, as stated in MIL-PRF-19500
Group D.
International Rectifier radiation hardened P-Channel
HEXFETs have been characterized in heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 -60
5
Radiation Characteristics
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