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參數(shù)資料
| 型號： | JANSG2N7467U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET |
| 中文描述： | 抗輻射功率MOSFET |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | JANSG2N7467U2 |
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.3mH
Peak IL = 75A, VGS = 12V
ISD
≤
75A, di/dt
≤
94A/
μ
s,
VDD
≤
30V, TJ
≤
150°C
Case Outline and Dimensions — SMD-2
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 04/2006
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