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參數(shù)資料
| 型號(hào)： | JANSG2N7381 |
| 英文描述： | 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 200伏600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 440K |
| 代理商： | JANSG2N7381 |
www.irf.com
5
Pre-Irradiation
IRHF7130
Post-Irradiation
Fig 6.
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 5.
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 7.
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b.
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 8a.
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
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