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參數(shù)資料
| 型號(hào)： | JANSG2N7381 |
| 英文描述： | 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
| 中文描述： | 200伏600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 257AA封裝 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 440K |
| 代理商： | JANSG2N7381 |
4
www.irf.com
IRHF7130
Pre-Irradiation
Post-Irradiation
Fig 2.
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 1.
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3.
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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