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參數(shù)資料
| 型號： | JANS2N3737 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 1.5AI（丙）|的TO - 46 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N3737 |
MIL-PRF-19500/560E
12
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.3.
C6
1037
For solder die attach: VCB ≥ 10 V dc, TA = Room ambient as defined in the
general requirements of MIL-STD-750. 6,000 cycles.
*
C6
1027
For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = + 175°C min.
* 4.4.4 Group E inspection, Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein. Group E inspection shall be performed for qualification or re-
qualification only. In case qualification was awarded to a prior revision of the spec sheet that did not request the
performance of table II tests, the tests specified in table II herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Thermal resistance (to be performed for qualification inspection only). The thermal resistance
measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall
apply:
a.
Collector current magnitude during power application shall be 0.15 A dc.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be + 25
°C ≤ T
R ≤ +35° C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit shall be R
θJC = 17.5° C/W for TO-39 devices and RθJC = 1.7.5° C/W for U3 devices.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3737UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N3740 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3741 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/396 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1.5A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:900mV @ 100mA，1A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-55°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應商器件封裝:TO-39（TO-205AD） 標準包裝:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
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