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參數(shù)資料
| 型號： | JANS2N3737 |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 1.5AI（丙）|的TO - 46 |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N3737 |
MIL-PRF-19500/560E
9
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO-39), figures 2, 3, and 4 (JANHC and JANKC) and figure 5 for U3 (TO–276AA)
devices herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with in
MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the
acquisition document (see 6.2).
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer,
marking may be omitted from the body, but shall be retained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group
A herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3737UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Waffle Pack |
| JANS2N3740 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3741 | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3763 | 功能描述:TRANS PNP 60V 1.5A TO-39 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/396 包裝:散裝 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1.5A 電壓 - 集射極擊穿（最大值）:60V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:900mV @ 100mA，1A 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:20 @ 1A，1.5V 功率 - 最大值:1W 頻率 - 躍遷:- 工作溫度:-55°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-205AD，TO-39-3 金屬罐 供應商器件封裝:TO-39（TO-205AD） 標準包裝:1 |
| JANS2N3810 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 0.05A 6-Pin TO-78 制造商:Microsemi Corporation 功能描述:PNP DUAL TRANSISTORS - Waffle Pack |
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