參數(shù)資料
型號(hào)： JANS2N3735L
英文描述： TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-5VAR
中文描述： 晶體管|晶體管|叩| 50V五（巴西）總裁| 1.5AI（丙）|至5VAR
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 128K
代理商： JANS2N3735L
MIL-PRF-19500/560E
11
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for
JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in
accordance with group A, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB ≥ 10 V dc.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc; PD ≥ 100 percent of rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table Via, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
Test condition A.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
*
1
1027
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall
be applied to the device to achieve TJ = +175°C minimum, and minimum power
dissipation of 75 percent of max rated PT (see 1.3 herein); n = 45, C = 0.
2
1027
The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B step 2 shall not be required more than once for any single
wafer lot. n = 45, C = 0.
3
1032
High- temperature life (non-operating), T
A = +200°C, t = 340 hours, n = 22,
C = 0.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein.
相關(guān)PDF資料
PDF描述
JANS2N3737 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-46
JANS2N3737UB BJT
JANS2N3749 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111
JANS2N3996 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-111
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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JANS2N3740 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack
JANS2N3741 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack
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