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MIL-PRF-19500/350G
8
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and
table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in VIa (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements
shall be in accordance with group A, subgroup 2 and table III herein. See 4.4.2.2 for JAN, JANTX, and JANTXV
group B testing. Electrical measurements (end-points) and delta requirements JAN, JANTX, and JANTXV shall be
after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein.
4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method
Condition
*
B4
1037
VCB = 10 V dc; 2,000 cycles.
*
B5
1027
(Note: If a failure occurs, resubmission shall be at the test conditions of the original
sample.) VCB = 10 V dc, PD
≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275
°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225
°C minimum.
B6
3131
RθJC = 17.5°C/W, see 4.5.2.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc. n = 45, C = 0. Power shall
be applied to the device to achieve TJ ≥ +150°C and power dissipation of PD ≥ 75 percent of the
rated PT (see 1.3).
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production. Group B,
step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
3
1032
High-temperature life (non-operating), TA = +200
°C. n = 22, c = 0, t = 340 hours.