參數(shù)資料
型號: IXTM67N10
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No
中文描述: 67 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
封裝: TO-204AE, 2 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 111K
代理商: IXTM67N10
4 - 4
2000 IXYS All rights reserved
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
V
DS
- Volts
1
10
100
I
D
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
G
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volt
0.00
0.25
0.50
0.75
1.00
1.25
1.50
I
S
0
25
50
75
100
125
150
V
DS
- Volts
0
5
10
15
20
25
C
0
1000
2000
3000
4000
5000
6000
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.01
0.1
D=0.2
D=0.02
D=0.01
D=0.5
D=0.1
D=0.05
Single pulse
C
oss
C
iss
10μs
100μs
1ms
10ms
100ms
V
DS
= 50V
I
D
= 37.5A
I
G
= 1mA
Limited by R
DS(on)
C
rss
T
J
= 125
°
C
T
J
= 25
°
C
f = 1MHz
V
DS
= 25V
Fig.7
Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
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