參數(shù)資料
型號: IXTK200N10P
廠商: IXYS CORP
元件分類: JFETs
英文描述: PolarHTTM Power MOSFET
中文描述: 200 A, 100 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 567K
代理商: IXTK200N10P
2004 IXYS All rights reserved
IXTK 200N10P
Fig. 2. Extended Output Characteristics
@ 25
o
C
0
50
100
150
200
250
300
350
0
0.5
1
1.5
2
V
D S
- Volts
2.5
3
3.5
4
4.5
5
I
D
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
o
C
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
3.5
V
D S
- Volts
I
D
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
o
C
0
25
50
75
100
125
150
175
200
0
0.2
0.4
0.6
V
D S
- Volts
0.8
1
1.2
1.4
1.6
I
D
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
I
D
= 200A
I
D
= 100A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
Fig. 5. R
DS(on)
Normalized to 0.5 I
D25
Value vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
50
100
150
200
250
300
350
I
D
- Amperes
R
D
T
J
= 25
o
C
V
GS
= 10V
T
J
= 175
o
C
V
GS
= 15V
相關(guān)PDF資料
PDF描述
IXTK21N100 High Voltage MegaMOSTMFETs
IXTN21N100 High Voltage MegaMOSTMFETs
IXTK250N10 High Current MegaMOSFET
IXTK33N50 High Current MegaMOSFET
IXTK62N25 High Current MegaMOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK20N140 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK20N150 功能描述:MOSFET 1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK210P10T 功能描述:MOSFET TrenchP Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK21N100 功能描述:MOSFET 21 Amps 100V 0.55 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK22N100L 功能描述:MOSFET N-CHAN 1000V 22A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube