參數(shù)資料
型號(hào)： IXSK50N60AU1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IGBT with Diode(VCES為600V，VCE(sat)為2.7V的絕緣柵雙極晶體管(帶二極管）)
中文描述： 75 A, 600 V, N-CHANNEL IGBT, TO-264
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 95K
代理商： IXSK50N60AU1
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation. All rights reserved.
TO-264 AA
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C, limited by leads
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 30
μ
H
75
50
200
A
A
A
I
= 100
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 22
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
0.9/6 Nm/lb.in.
10
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
IGBT with Diode
IXSK 50N60AU1
V
CES
I
C25
V
CE(sat)
= 600 V
= 75 A
= 2.7 V
Combi Pack
Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
750
15
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.7
V
Features
G
International standard package
JEDEC TO-264 AA
G
Guaranteed Short Circuit SOA
capability
G
High frequency IGBT and anti-
parallel FRED in one package
G
2nd generation HDMOS
TM
process
G
Low V
- for minimum on-state conduction
losses
G
MOS Gate turn-on
- drive simplicity
G
Fast Recovery
Epitaxial Diode
(FRED)
- soft recovery with low I
RM
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
Advantages
G
Space savings (two devices in one
package)
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Reduces assembly time and cost
IXYS reserves the right to change limits, test conditions and dimensions.
92822G (4/96)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSK50N60BD1 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSK50N60BU1 功能描述:IGBT 晶體管 75 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSK80N60B 功能描述:IGBT 晶體管 80 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSM17N100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204
IXSM17N100A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204
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