參數(shù)資料
型號(hào)： IXSK30N60CD1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Short Circuit SOA Capability
中文描述： 55 A, 600 V, N-CHANNEL IGBT, TO-264
封裝： TO-264, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 72K
代理商： IXSK30N60CD1
1 - 2
2000 IXYS All rights reserved
TO-247AD
(IXSH)
High Speed IGBT with Diode
IXSH
30
N60CD1
IXSK
30
N60CD1
IXST
30
N60CD1
Short Circuit SOA Capability
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 33
non repetitive
T
C
= 25 C
55
30
A
A
A
110
I
CM
= 60
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
2.5
V
Features
International standard packages:
JEDEC TO-247, TO-264& TO-268
Short Circuit SOA capability
High freqeuncy IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduces assembly time and cost
High power density
98518A (7/00)
V
CES
I
C25
V
CE(sat)
=
t
fi
=
=
600 V
55 A
2.5 V
70 ns
=
TO-268 (D3)
(IXST)
G
C
E
G
CE
TO-264
(IXSK)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料
PDF描述
IXST30N60CD1 Short Circuit SOA Capability
IXSK30N60BD1 High Speed IGBT with Diode
IXST30N60BD1 High Speed IGBT with Diode
IXSH30N60U1 Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為2.5V的高速絕緣柵雙極場(chǎng)效應(yīng)管(帶二極管）)
IXSH30N60AU1 Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為3.0V的高速絕緣柵雙極場(chǎng)效應(yīng)管(帶二極管）)
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