參數(shù)資料
型號(hào): IXST30N60BD1
廠商: IXYS CORP
元件分類(lèi): IGBT 晶體管
英文描述: High Speed IGBT with Diode
中文描述: 55 A, 600 V, N-CHANNEL IGBT, TO-268AA
封裝: TO-268AA, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 72K
代理商: IXST30N60BD1
1 - 2
2000 IXYS All rights reserved
TO-247AD
(IXSH)
High Speed IGBT with Diode
IXSH
30
N60CD1
IXSK
30
N60CD1
IXST
30
N60CD1
Short Circuit SOA Capability
G
CE
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 33
non repetitive
T
C
= 25 C
55
30
A
A
A
110
I
CM
= 60
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
200
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
2.5
V
Features
International standard packages:
JEDEC TO-247, TO-264& TO-268
Short Circuit SOA capability
High freqeuncy IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Surface mountable, high power case
style
Reduces assembly time and cost
High power density
98518A (7/00)
V
CES
I
C25
V
CE(sat)
=
t
fi
=
=
600 V
55 A
2.5 V
70 ns
=
TO-268 (D3)
(IXST)
G
C
E
G
CE
TO-264
(IXSK)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料
PDF描述
IXSH30N60U1 Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為2.5V的高速絕緣柵雙極場(chǎng)效應(yīng)管(帶二極管))
IXSH30N60AU1 Low VCE(sat) High Speed IGBT with Diode(VCE(sat)為3.0V的高速絕緣柵雙極場(chǎng)效應(yīng)管(帶二極管))
IXSH30N60 Low VCE(sat) High Speed IGBT(VCE(sat)為2.5V的高速絕緣柵雙極場(chǎng)效應(yīng)管)
IXSH30N60A Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場(chǎng)效應(yīng)管)
IXSM30N60 Low VCE(sat) IGBT, High Speed IGBT
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