參數(shù)資料
型號(hào)： IXGQ28N120B
廠商： IXYS CORP
元件分類： IGBT 晶體管
中文描述： 50 A, 1200 V, N-CHANNEL IGBT
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 599K
代理商： IXGQ28N120B
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1 6,162,665
6,534,343
6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= 28A; V
CE = 10 V,
Note 2
20
30
S
C
ies
2700
pF
28N120B
170
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
28N120BD1 180
pF
C
res
60
pF
Q
g
92
nC
Q
ge
I
C = 28A, VGE = 15 V, VCE = 0.5 VCES
17
nC
Q
gc
37
nC
t
d(on)
30
ns
t
ri
20
ns
t
d(off)
180
280
ns
t
f i
160
320
ns
E
off
2.0
5.0 mJ
t
d(on)
35
ns
t
ri
28
ns
E
on
2.5
mJ
t
d(off)
250
ns
t
f i
300
ns
E
off
8.0
mJ
R
thJC
0.5 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
F
T
C = 90°C10
A
V
F
I
F = 10 A, VGE = 0 V
2.95
V
I
F = 10 A, VGE = 0 V, TJ = 125°C
2.0
V
I
RM
I
F = 10 A; -diF/dt = 400 A/s, VR = 600 V
14
A
t
rr
V
GE = 0 V; TJ = 125°C
120
ns
t
rr
I
F = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V
40
ns
R
thJC
2.5 K/W
Inductive load, T
J = 125°
°°°°C
I
C = 28A; VGE = 15 V
V
CE = 0.8 VCES; RG = Roff = 5
Note 1
Inductive load, T
J = 25°
°°°°C
I
C = 28 A; VGE = 15 V
V
CE = 0.8 VCES; RG = Roff = 5
Note 1.
Notes:
1.
Switching times may increase for V
CE (Clamp) > 0.8 VCES,
higher T
J or increased RG.
2.
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
IXGQ 28N120B
IXGQ 28N120BD1
TO-3P (IXTQ) Outline
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