- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361012 > IXGK50N60BD1 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA PDF資料下載
參數(shù)資料
| 型號(hào)： | IXGK50N60BD1 |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國(guó)際消費(fèi)電子展| 75A條一（c）|至264AA |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 120K |
| 代理商： | IXGK50N60BD1 |
1 - 5
2000 IXYS All rights reserved
IXGK 50N60BD1
IXGX 50N60BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
500
V
V
GE(th)
I
C
= 500 A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
650
5
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.3
V
HiPerFAST
TM
IGBT with Diode
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25 C to 150 C
= 25 C to 150 C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
T
C
T
C
= 25 C
= 90 C
= 25 C, 1 ms
75
50
A
A
A
200
SSOA
(RBSOA)
V
GE
= 15 V, T
VJ
= 125 C, R
G
= 10
Clamped inductive load, L = 30 H
I
CM
= 100
@ 0.8 V
CES
A
P
C
T
C
= 25 C
300
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
M
d
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
Weight
TO-264
TO-268
10
5
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
International standard packages
JEDEC TO-268 and PLUS247 (hole-
less TO-247)
High frequency IGBT and antparallel
FRED in one package
New generation HDMOS
TM
process
High current handling capability
MOS Gate turn-on fordrive simplicity
Fast Recovery Epitaxial Diode
(FRED) with soft recovery and low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices on one
package
Easy to mount with 1 screw
GCE
TO-264 AA
(IXGK)
98516B (7/00)
PLUS247
(IXGX)
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
600
75
2.3
85 ns
V
A
V
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGX50N60BD1 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247VAR |
| IXGK50N60BD1 | HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.3V的HiPerFAST絕緣柵雙極晶體管(帶二極管）) |
| IXGM10N50 | TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-204AE |
| IXGM10N60 | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-204AE |
| IXGA15N120C | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGK50N60BU1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK50N60C2D1 | 功能描述:IGBT 晶體管 50 Amps 600V 2.5V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK50N90B2D1 | 功能描述:IGBT 晶體管 50 Amps 600V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK55N120A3H1 | 功能描述:IGBT 模塊 Low-Frequency Range Low Vcesat w/ Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGK60N60 | 功能描述:IGBT 晶體管 75 Amps 600V 1.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。