參數(shù)資料
型號(hào): IXFH12N100
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFET Power MOSFETs
中文描述: 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 82K
代理商: IXFH12N100
4 - 4
2000 IXYS All rights reserved
IXFH 10N100
IXFM 10N100
IXFH 12N100
IXFM 12N100
IXFH 13N100
Fig.7
Gate Charge Characteristic Curve
Fig.8
Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
V
DS
- Volts
1
10
100
1000
I
D
0.1
1
10
Gate Charge - nCoulombs
0
25
50
75
100
125
150
V
G
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
0
5
10
15
20
C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
0.001
0.01
0.1
1
D=0.5
C
rss
C
oss
10μs
100μs
1ms
10ms
100ms
C
iss
Limited by R
DS(on)
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Single Pulse
f = 1MHz
V
DS
= 25V
T
J
= 125
°
C
T
J
= 25
°
C
D=0.2
D=0.1
D=0.05
D=0.01
D=0.02
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH12N100 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXFH12N100F 功能描述:MOSFET 12 Amps 1000V 1.05 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH12N100F_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerRF Power MOSFETs
IXFH12N100P 功能描述:MOSFET 12 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH12N100Q 功能描述:MOSFET 12 Amps 1000V 1.05 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube